The advanced electronic materials bring break
-throughs in electronics. Our division is researching
them to create new devices, and we are now focused on nitride semiconductors widely used in blue LEDs. Since 1987, we have achieved the proposal of InGaAlN system for device applications, InGaN epitaxial growth for blue LEDs, the observation of blue photoluminescence, the prediction of the miscibility gap, the polarity control growth, the prediction of small band-gap energy of InN and its experimental confirmation. We are improving the crystalline quality of InN by using Pressurize-Reactor Metalorganic-Vapor-Phase Epitaxy (PR- MOVPE) system self-developed. The nitride semiconductors have a potential for the sustainable society through energy saving and energy harvesting devices such as highefficient solid-state-lightening, thermally stable laser diodes for dense-wavelength-division multiplexing (D-WDM) optical communications systems, and high efficient and low cost solar cells without any toxic materials.

Contact Information

URL: http://www.matsuoka-lab.imr.tohoku.ac.jp/

TEL : +81-22-215-3067 / FAX: +81-22-215-2302